PART |
Description |
Maker |
SPD02N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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Infineon
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SPI08N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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Infineon
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2SC3752 |
NPN Triple Diffused Planar Silicon Transistor 800V/3A Switching Regulator Applications
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SANYO
|
40HF 40HF160 40HF80 42HF160M 41HF160 |
STANDARD RECOVERY DIODES Diode Switching 1.6KV 40A 2-Pin DO-5 Diode Switching 800V 40A 2-Pin DO-5
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New Jersey Semi-Conductor Products, Inc. New Jersey Semiconductors New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
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STB4NB80 STB4NB80FP 5976 |
N - CHANNEL 800V - 3 Ohm - 4A - PowerMESH MOSFET From old datasheet system N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET) N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET) N沟道800V3Ω- 4A条,TO-220/TO-220FP PowerMESHTM MOSFET的(不适用沟道MOSFET的)
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SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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IRFIBE30G IRFIBE30 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=2.1A) Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=2.1A)
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IRF[International Rectifier] http://
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FQPF3N80C FQP3N80C |
800V N-Channel Advance Q-FET C-Series 800V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor]
|
APT8075 APT8075BN APT8090BN |
POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology]
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IRFK4HE50 |
800V,26A,N-Channel HEXFET Power MOSFET(800V,26A,N沟道 HEXFET 功率MOS场效应管) 800V的,26A,N沟道HEXFET功率MOSFET00V的,26A条,沟道的HEXFET功率马鞍山场效应管)
|
International Rectifier, Corp.
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STD2NB80 6424 STD2NB80T4 |
From old datasheet system N-CHANNEL MOSFET N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 1.9AI(四)|52AA
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SGS Thomson Microelectronics ST Microelectronics 意法半导 STMicroelectronics N.V.
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FQI5N80 FQB5N80 FQI5N80TU |
800V N-Channel QFET 800V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor]
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